mar. 2002 application contactless ac switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications mitsubishi semiconductor ? triac ? bcr1am low power use glass passivation type bcr1am ? t (rms) ........................................................................ 1a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # .............................. 5ma (3ma) ? 5 ? fgt # ..................................................................... 10ma symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =56 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 1.0 10 0.41 1 0.1 6 1 ?0 ~ +125 ?0 ~ +125 0.23 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class 12 600 720 unit v v maximum ratings ? 1. gate open. type name voltage class 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 5.0 max 4.4 5.0 max 12.5 min 3.9 max 1.3 1.25 1.25 circumscribe circle 0.7 1 3 2 outline drawing dimensions in mm jedec : to-92
mar. 2002 4.4 2.4 0.8 0.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t c = 25 c 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor ? triac ? bcr1am low power use glass passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # v fgt # i fgt ! i rgt ! i rgt # i fgt # v gd r th (j-c) (dv/dt) c test conditions t j =125 c, v drm applied t c =25 c, i tm =1.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v v ma ma ma ma v c/w v/ s typ. ! @ # $ ! @ # $ ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t 2 terminal 1.5mm away from the molded case. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) electrical characteristics parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 0.5a/ms 3. peak off-state voltage v d =400v limits min. 0.1 2 max. 1.0 1.6 2.0 2.0 2.0 2.0 5 5 ? 5 5 ? 5 10 50 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves ? 4 ? 5. high sensitivity (i gt 3ma) is also available. (i gt item 1 )
mar. 2002 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 2 v gm = 6v p gm = 1w p g(av) = 0.1w i gm = 1a v gd = 0.1v i fgt iii i fgt i i rgt i i rgt iii maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 v rgt iii , v fgt iii v fgt i , v rgt i typical example 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i rgt iii, i fgt iii i fgt i, i rgt i typical example 2.0 1.6 1.2 0.8 0.4 0 2.0 0 0.4 0.8 1.2 1.6 360 conduction resistive, inductive loads 160 120 100 60 20 0 1.6 0 0.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 360 conduction curves apply regardless of conduction angle resistive, inductive loads maximum transient thermal impedance characteristics transient thermal impedance ( c/ w) conduction time (cycles at 60hz) 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 junction to ambient junction to case gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) mitsubishi semiconductor ? triac ? bcr1am low power use glass passivation type
mar. 2002 laching current vs. junction temperature laching current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) breakover voltage vs. junction temperature junction temperature ( c) holding current vs. junction temperature junction temperature ( c) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/s) 100 (%) breakover voltage ( dv/dt = xv/s ) breakover voltage ( dv/dt = 1v/s ) 160 100 80 40 20 0 140 40 40 60 20 0 20 60 80 140 100120 60 120 typical example 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 typical example 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 160 120 100 60 20 0 1.6 0 0.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 curves apply regardless of conduction angle natural convection no fins resistive, inductive loads 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) 140 60 20 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 40 0 40 80 120 t 2 + , g + t 2 , g t 2 , g + ? ? ? ? ? t 2 + , g typical example typical example distribution 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 typical example t j = 125 c i quadrant iii quadrant mitsubishi semiconductor ? triac ? bcr1am low power use glass passivation type
mar. 2002 commutation characteristics critical rate of rise of off-state commutating voltage (v/s) rate of decay of on-state commutating current (a /ms) gate trigger current vs. gate current pulse width gate current pulse width (s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i fgt i i rgt i i fgt iii typical example 10 1 7 5 3 2 10 1 23 5710 0 10 0 7 5 3 2 23 5710 1 4 4 44 10 1 t c = 125 c i t = 1a = 500s v d = 200v typical example i quadrant iii quadrant minimum charac- teristics value mitsubishi semiconductor ? triac ? bcr1am low power use glass passivation type 6 ? 6 ? 6 ? 6 ? 6v 6v 6v 6v r g r g r g r g a v a v a v a v test procedure 1 test procedure 3 test procedure 2 test procedure 4 gate trigger characteristics test circuits
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